The process allows etching up to several microns of oxide with a good uniformity. Recipe tuning is also possible.
Equipment
Applied Materials Precision 5000 Mark II – dielectric etching
Specifications
| Film |
Etch rate [nm/min] |
Uniformity (3σ) |
| SiO2 |
140 |
±8 |
Endpoint detection with adjustable over etch available.
Restrictions & Requirements
- Substrate size (max.): 4in
- Substrate size (min.): N/A, sample allowed but require carrier
- Other substrate restrictions: No metal layers in contact with plasma
- Batch processing: Single wafer processing
- Carrier substrate allowed: Yes
- Manual load/Carrier load: Automatic loading/handling of 25 wafers