Dry etching, i.e., etching under vacuum with reactive gases, is used to remove material and to create the wanted topography. Our precision dry etching tools feature state-of-the-art processes with end point detection. We have the appropriate processes for conventional structures in Si, and compound semiconductor materials, for deep Si structures, and for meals and dielectrics.

 

 

Name Manufacturer Model Details ICP STS ICP DRIE (Si, SiO2) Details P5000 RIE/PECVD cluster Applied Materials Precision 5000 Mark II (Dielectric, MxP, CVD) Details Esa Oxford Plasma System Plasmalab80Plus (Oxford RIE System) Chamber B Details Fabio Oxford Instrument ICP380 Etch System Details Gallus Oxford Instrument ICP380 Etch System (GaAs & InP) Details Tegal Plasmaline B300RF Details Tepla TePla 300 (Microwave Plasma Asher) Details Plasmatvätt Pico Diener PICO RF Low pressure plasma etcher Details RIE Plasmalab System 100 RIE of thin films (Si3N4 & SiO2) Details Ariel Oxford Plasma Technology Plasmalab80Plus (Oxford RIE System) Details RIE ICP O2/AR Albanova Oxford Plasmalab 80+ Details Cryo RIE Albanova Oxford Plasmalab 100 Details Orbis, Vapor HF etch memsstar Orbis Alpha Details Cobra ICP-RIE Albanova Oxford Instruments Plasmapro 100 Cobra 300 Details Mariana SPTS Rapier Details AJA ion beam etching Albanova AJA international Inc. AJA ion miller